doc. no : qw0905-l rev. : date : 07 - apr. - 2008 a29b/hy4g2x-pf a data sheet ligitek electronics co.,ltd. property of ligitek only led array la29b/hy4g2x-pf pb lead-free parts
note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. lh25820-pf 1/7 la29b/hy4g2x-pf page part no. package dimensions ligitek electronics co.,ltd. property of ligitek only ly25820-pf lg25820-pf 6.0x7=42 0.5 typ 1.0min + - 10.0 13.0min 2.3typ 50.0 0.5 5.0 5.0 2.7 h ygg g g 12.5min 0.5 typ 2.3typ 1.0min + - 8.0 1.5max 5.0 2.8 x x
part no. absolute maximum ratings at ta=25 " part no note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. typical electrical & optical characteristics (ta=25 " ) forward current peak forward current duty 1/10@10khz operating temperature storage temperature reverse current @5v power dissipation peak wave length # pnm material green emitted 565 lens green diffused color viewing angle 2 $ 1/2 (deg) spectral halfwidth %# nm 20 luminous intensity @10ma(mcd) forward voltage @ ma(v) 1.2 min. 2.6 max. 301.7 min. typ. 3.0 160 tstg ir t opr -40 ~ +100 " 10 -40 ~ +85 & a " i f pd i fp parameter symbol ma 20 80 60 ma mw y ratings unit ligitek electronics co.,ltd. property of ligitek only 2/7 page gaasp/gap yellow diffused yellow585351.72.61.84.5160 gap red diffused red697901.72.60.250.5160 30 100 120 g 20 40 60 h la29b/hy4g2x-pf la29b/hy4g2x-pf gap
1.5 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 ambient temperature( ) 1000 900 800 700 600 wavelength (nm) fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a 0.0 0.5 1.0 0.8 -40 0.9 -20020406080100-40 0.0 1.0 0.5 -20 80 40 20 060100 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current forward current(ma) fig.4 relative intensity vs. temperature forward voltage(v) fig.3 forward voltage vs. temperature 1.1 1.0 1.2 f o r w a r d c u r r e n t ( m a ) 0.1 1.0 1.0 100 10 1000 2.03.0 2.0 3.0 2.5 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 4.05.01.0 0.0 0.5 1.0 2.0 1.5 3.0 2.5 typical electro-optical characteristics curve fig.1 forward current vs. forward voltage h chip part no. 101001000 page 3/7 la29b/hy4g2x-pf
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a 550 wavelength (nm) 500 0.0 0.5 600650700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 20 060100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve part no. 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 10 1.0 y chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 4/7 page forward current(ma) 1.0101001000 la29b/hy4g2x-pf
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) page forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip part no. 5/7 la29b/hy4g2x-pf
note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. page 6/7 ligitek electronics co.,ltd. property of ligitek only soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to case) 2.wave soldering profile dip soldering preheat: 120 c max preheat time: 60seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to case) 260 c3sec max 5 /sec max 260 120 temp( c) time(sec) 150 50 100 2 /sec max 25 0 preheat 0 60 seconds max part no. la29b/hy4g2x-pf
mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.t.sol=260 5 2.dwell time= 10 1sec. 1.t.sol=230 5 2.dwell time=5 1sec solderability test this test intended to see soldering well performed or not. 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles solder resistance test thermal shock test high temperature high humidity test the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hours. page jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) low temperature storage test operating life test high temperature storage test the purpose of this is the resistance of the device which is laid under condition of hogh temperature for hours. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. test condition test item reliability test: description reference standard ligitek electronics co.,ltd. property of ligitek only 7/7 part no. la29b/hy4g2x-pf
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